1 subject to change without notice. www.cree.com datasheet: C3D10060A, rev. b C3D10060A ?silicon carbide schottky diode z-r ec ? r ectifier features ? 600-volt schottky recti? er ? zero reverse recovery current ? zero forward recovery voltage ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coef? cient on v f bene? ts ? replace bipolar with unipolar recti? ers ? essentially no switching losses ? higher ef? ciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies ? power factor correction - typical pfc p out : 1000w-2000w ? motor drives - typical power : 3hp-5hp package to-220-2 maximum ratings symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 600 v v rsm surge peak reverse voltage 600 v v dc dc blocking voltage 600 v i f continuous forward current 10 12 a t c < 150?c t c < 140?c i frm repetitive peak forward surge current 67 44 a t c =25?c, t p =10 ms, half sine wave, d=0.3 t c =110?c, t p =10 ms, half sine wave, d=0.3 i fsm non-repetitive peak forward surge current 90 71 a t c =25?c, t p =10ms, half sine wave, d=0.3 t c =110?c, t p =10 ms, half sine wave, d=0.3 i fsm non-repetitive peak forward surge current 250 a t c =25?c, t p =10 s, pulse p tot power dissipation 136.3 59 w t c =25?c t c =110?c t j , t stg operating junction and storage temperature -55 to +175 ?c to-220 mounting torque 1 8.8 nm lbf-in m3 screw6-32 screw pin 1pin 2 case part number package marking C3D10060A to-220-2 c3d10060 v rrm = 600 v i f = 10 a ( t c < 150) q c = 25 nc
2 C3D10060A rev. b electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.52.0 1.82.4 v i f = 10 a t j =25c i f = 10 a t j =175c i r reverse current 10 20 50 200 #a v r = 600 v t j =25c v r = 600 v t j =175c q c total capacitive charge 25 nc v r = 600 v, i f = 10 a d i /d t = 500 a/#s t j = 25c c total capacitance 480 50 42 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz note:1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc thermal resistance from junction to case 1.1 c/w typical performance figure 1. forward characteristics figure 2. reverse characteristics 100 90 80 70 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 800 900 t j = 25c t j = 75c t j = 125c t j = 175c t j = 25c t j = 75c t j = 125c t j = 175c i f forward current (a) v f forward voltage (v) 20 18 16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v r reverse voltage (v) i r reverse current ( ! a)
3 C3D10060A rev. b figure 4. capacitance vs. reverse voltage figure 3. current derating figure 5. transient thermal impedance typical performance 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 tim e (s) zth (c/w) 1e11e0 1e-1 1e-2 1e-5 1e-4 1e-3 1e-2 1e-1 1e0 1e1 400350 300 250 200 150 100 50 0 1 10 100 1000 c capacitance (pf) v r reverse voltage (v )
! " # $ % % & ' % ( # ) * ( % + " , - . / 0 1 2 0 3 4 5 6 7 8 9 : ; < = > ? @ a b c < = > ? @ a b d < = > ? @ a b e < = > ? @ a b > f
4 C3D10060A rev. b typical performance 140 120100 80 60 40 20 0 power dissipation (w) t c case temperature ( c ) 25 50 75 100 125 150 175 figure 6. power derating 0.000 20.000 40.000 60.000 80.000 100.000 120.000 140.000
5 C3D10060A rev. b pos inches millimeters min max min max a .381 .410 9.677 10.414 b .235 .255 5.969 6.477 c .100 .120 2.540 3.048 d .223 .337 5.664 8.560 e .590 .615 14.986 15.621 f .143 .153 3.632 3.886 g 1.105 1.147 28.067 29.134 h .500 .550 12.700 13.970 j r 0.197 r 0.197 l .025 .036 .635 .914 m .045 .055 1.143 1.397 n .195 .205 4.953 5.207 p .165 .185 4.191 4.699 q .048 .054 1.219 1.372 s 3 6 3 6 t 3 6 3 6 u 3 6 3 6 v .094 .110 2.388 2.794 w .014 .025 .356 .635 x 3 5.5 3 5.5 y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 note: 1. dimension l, m, w apply for solder dip finish a c e d g h b j l m n f p q s t u v w x y 1 2 z package dimensions package to-220-2 pin 1pin 2 case
6 6 C3D10060A rev. b this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac de? brillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traf? c control systems, or weapons systems. copyright ? 2009 - 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks and z-rec is a trademark of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power recommended solder pad layout v t r t diode model csd10060 r part number package marking C3D10060A to-220-2 c3d10060 ?the levels of environmentally sensitive, persistent biologically toxic (pbt), persistent organic pollutants (pop), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2002/95/ec on the restriction of the use of certain hazardous substances in electrical and electronic equipment (rohs), as amended through april 21, 2006. to-220-2 note: t j = diode junction temperature in degrees celcius diode model vf t = v t +if*r t v t = 0.98+(t j * -1.6*10 -3 ) r t = 0.04+(t j * 0.522*10 -3 )
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